- Demonstrates 700 Volt threshold in the Firm’s lab as component of vertical GaN product progress
- New U.S. Patent issued – Validating novelty and setting up protection of the Company’s vertical GaN device patterns
ITHACA, NY / ACCESSWIRE / March 30, 2022 / Odyssey Semiconductor Technologies, Inc. ODII, a semiconductor device enterprise creating modern high-voltage, vertical ability switching factors primarily based on proprietary Gallium Nitride (“GaN”) processing technological innovation, currently introduced it has attained a engineering milestone in its advancement of the world’s most sophisticated vertical GaN electrical power area-outcome transistors (FETs).
World sustainability traits demand new systems and techniques for electrical power conversion in electric powered automobiles, photo voltaic and wind turbines, facts centers and industrial motors. The trend to depart from standard silicon-centered transistors has been underway for around a 10 years – silicon can no extended satisfy the voltage and conversion performance demanded. Gallium-Nitride (GaN), deployed as lateral (or parallel) conduction FETs, delivers efficiency advancements but fall short to supply the voltage ranking. Silicon Carbide (SiC) supplies the voltage ranking but falls shorter on performance. Nonetheless, till Odyssey’s the latest innovation in vertical GaN, the performance and reliability of these new, predominant techniques have been inadequate.
Odyssey was established to commercialize vertical GaN FETs. FETs that can present the conversion effectiveness of GaN with the greater voltage score of SiC. The technique will lead to breakthrough efficiency for the most demanding apps.
Odyssey has now validated its strategy at a 700 V rating whilst also supplying business-major performance with and remarkably small on-resistance approaching 1mOhm-cm2. These products also show extremely minimal gate leakage and can be operated in a manner the place they are normally “off”. Technological know-how validation can get started on these 700 V gadgets though an extension of the very same architecture to the upcoming milestone of a 1200 V ranking or much better is done.
Odyssey, with global headquarters in Ithaca, New York is building this technological innovation in their very own producing facility. As the U.S. desires to bolster domestic semiconductor manufacturing, Odyssey is showing its motivation with its individual wafer fabrication facility. This also streamlines the technological know-how and product or service growth procedures with shut collaboration among R&D and the fab.
The Business is also announcing these days that the United States Patent and Trademark Business just lately authorized U.S. Patent 11,251,295, which issued February 15th, 2022, with respect to essential elements of Odyssey’s vertical GaN technological innovation. The Patent is entitled “Vertical subject outcome transistor product and method of fabrication” and relates to a technique of fabricating a superior voltage switching unit utilizing GaN levels and resources. Odyssey Semiconductor now has two issued U.S. patents, and has submitted many other related statements for the vertical GaN system and linked engineering.
“This 700 V milestone validates our market-primary performance and remarkably small on-resistance. Odyssey is on-track to supply 1200 V vertical GaN FETs in 2022 for a handful of customers who have presently asked for engineering samples. We are thrilled the U.S. Patent and Trademark Office environment has granted our U.S. patent. This strengthens Odyssey Semiconductor’s leadership position in vertical GaN products and related technological know-how,” claimed Rick Brown, co-founder, interim CEO, CTO, and Board member. “Our patent is 1 of several that will help defend Odyssey’s critical facets on our GaN gadgets.”
“Our aim is to completely secure our GaN products using both patent rights and trade tricks,” concluded Brown.
About Odyssey Semiconductor Systems, Inc.
Odyssey Semiconductor Systems, Inc. (www.odysseysemi.com), has formulated a proprietary engineering that is intended to permit for GaN to change SiC as the major high-voltage electric power switching semiconductor material. Dependent in Ithaca, NY, the Organization owns and operates a 10,000 sq. ft. semiconductor wafer manufacturing facility full with a combine of class 1,000 and class 10,000 clear house as properly as applications for highly developed semiconductor advancement and generation. Odyssey Semiconductor also provides a environment-course semiconductor unit enhancement and foundry company.
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Source: Odyssey Semiconductor, Inc.
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